Not for New Designs
HiPerFET TM
Power MOSFETs
Q-Class
IXFH40N30Q
IXFT40N30Q
V DSS
I D25
R DS(on)
= 300V
= 40A
≤ 85m Ω
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q g
TO-268 (IXFT)
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
300
300
± 20
± 30
V
V
V
V
TO-247 (IXFH)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
40
160
A
A
G
D
S
D (Tab)
I A
E AS
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
T C = 25 ° C
40
1.0
5
300
A
J
V/ns
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
Features
International Standard Packages
Low Intrinsic Gate Resistance
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13 / 10
4
6
° C
° C
Nm/lb.in.
g
g
Low Package Inductance
Fast Intrinsic Rectifier
Low R DS(on) and Q G
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BV DSS
V GS = 0V, I D = 250 μ A
300
V
Applications
V GS(th)
V DS = V GS , I D = 4mA
2.0
4.0
V
DC-DC Converters
I GSS
I DSS
R DS(on)
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
± 100 nA
25 μ A
1 mA
85 m Ω
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS98504C(03/11)
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